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s2305 n-channel sic power mosfet bare die 1200v 10a* 1 l inner circuit l features v dss i d r ds(on) (typ.) 450m w l application 1) low on-resistance 2) fast switching speed 3) fast reverse recovery 4) easy to parallel 5) simple to drive - 6 to 22 v l absolute maximum ratings (t a = 25c) symbol value unit drain - source voltage t c = 25c continuous drain current pulsed drain current parameter i d,pulse *2 25 a junction temperature t j 175 c range of storage temperature t stg - 55 to + 175 c ? solar inverters ? dc/dc converters ? switch mode power supplies gate - source surge voltage (t surge ? 300nsec) v gss-surge *3 - 10 to 26 v ? induction heating ? motor drives v dss 1200 v i d *1 10 a gate - source voltage (dc) v gss (g) gate (d) drain (s) source *1 body diode (g) (s) (d) 1/11 2016.02 - rev.c data sheet www.rohm.com ? 2016 rohm co., ltd. all rights reserved.
s2305 *1 limited only by maximum temperature allowed. *2 pw ? 10 ? s, duty cycle ? 1% *3 example of acceptable vgs waveform *4 pulsed l electrical characteristics (t a = 25c) parameter symbol conditions values unit min. typ. max. - v zero gate voltage drain current i dss v ds = 1200v, v gs = 0v ? a t j = 25c - 1 10 t j = 150c - 2 drain - source breakdown voltage v (br)dss v gs = 0v, i d = 1ma 1200 - - gate - source leakage current i gss + v gs = + 22v, v ds = 0v - - 100 na - 100 na gate threshold voltage v gs (th) v ds = v gs , i d = 0.9ma 1.6 2.8 4.0 v gate - source leakage current i gss - v gs = - 6v, v ds = 0v - - - w gate input resistance r g f = 1mhz, open drain - 25 m w t j = 25c - 450 556 t j = 125c - 610 - static drain - source on - state resistance r ds(on) *4 v gs = 18v, i d = 3a t surge t surge + 26v + 2 2 v 0v - 6v - 10v 2/11 2016.02 - rev.c www.rohm.com ? 2016 rohm co., ltd. all rights reserved. data sheet
s2305 l electrical characteristics (t a = 25c) parameter symbol conditions values unit min. typ. max. s input capacitance c iss v gs = 0v - 463 - pf output capacitance c oss transconductance g fs *4 v ds = 10v, i d = 3a - 1.0 - v ds = 800v - 21 - reverse transfer capacitance c rss f = 1mhz - 4 - pf turn - on delay time t d(on) *4 v dd = 400v, v gs = 18v - 19 - ns rise time t r *4 effective output capacitance, energy related c o(er) v gs = 0v v ds = 0v to 500v - 31 - fall time t f *4 r g = 0 w - 34 - i d = 3a - 17 - turn - off delay time t d(off) *4 r l = 133 w - 38 - ? j turn - off switching loss e off *4 - 17 - turn - on switching loss e on *4 v dd = 600v, i d =3a v gs = 18v/0v r g = 0 w , l=500 ? h *e on includes diode reverse recovery - 47 - - 27 - l gate charge characteristics (t a = 25c) parameter symbol conditions values unit min. typ. max. v - 9 - gate plateau voltage v (plateau) v dd = 400v, i d = 3a - 10.5 - nc gate - source charge q gs *4 i d = 3a - 7 - gate - drain charge q gd *4 v gs = 18v total gate charge q g *4 v dd = 400v 3/11 2016.02 - rev.c www.rohm.com ? 2016 rohm co., ltd. all rights reserved. data sheet
s2305 l body diode electrical characteristics (source-drain) (t a = 25c) parameter symbol conditions values unit min. typ. max. a inverse diode direct current, pulsed i sm *2 - - 25 a inverse diode continuous, forward current i s *1 t c = 25c - - 10 v reverse recovery time t rr *4 i f = 3a, v r = 400v di/dt = 110a/ ? s - 19 - ns reverse recovery charge q rr *4 forward voltage v sd *4 v gs = 0v, i s = 3a - 4.3 - - 13 - nc peak reverse recovery current i rrm *4 - 1.4 - a 4/11 2016.02 - rev.c www.rohm.com ? 2016 rohm co., ltd. all rights reserved. data sheet
s2305 l electrical characteristic curves 0 2 4 6 8 10 0 2 4 6 8 10 t a =25oc pulsed 10v v gs = 8v 12v 14v 16v 18v 20v 0 1 2 3 4 5 0 1 2 3 4 5 t a =25oc pulsed 10v v gs = 8v 12v 14v 16v 18v 20v 0 2 4 6 8 10 0 2 4 6 8 10 t a =150oc pulsed 10v v gs = 8v 12v 14v 16v 18v 20v 0 1 2 3 4 5 0 1 2 3 4 5 t a =150oc pulsed 10v v gs = 8v 12v 14v 16v 18v 20v fig.1 typical output characteristics(i) fig.2 typical output characteristics(ii) fig.3 t j = 150 c typical output characteristics(i) fig.4 t j = 150 c typical output characteristics(ii) drain - source voltage : v ds [v] drain - source voltage : v ds [v] drain current : i d [a] drain current : i d [a] drain current : i d [a] drain - source voltage : v ds [v] drain current : i d [a] drain - source voltage : v ds [v] 5/11 2016.02 - rev.c www.rohm.com ? 2016 rohm co., ltd. all rights reserved. data sheet
s2305 l electrical characteristic curves 0.001 0.01 0.1 1 10 0 2 4 6 8 10 12 14 16 18 20 t a =150oc t a =75oc t a =25oc t a = - 25oc v ds = 10v plused 0 1 2 3 4 5 6 7 8 9 10 0 2 4 6 8 10 12 14 16 18 20 v ds = 10v plused t a =150oc t a =75oc t a =25oc t a = - 25oc 0.01 0.1 1 10 0.01 0.1 1 10 v ds = 10v plused t a =150oc t a =75oc t a =25oc t a = - 25oc 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 -50 0 50 100 150 200 v ds = 10v i d = 1ma fig.6 typical transfer characteristics (ii) fig.5 typical transfer characteristics (i) drain current : i d [a] drain current : i d [a] fig.7 gate threshold voltage vs. junction temperature gate threshold voltage : v gs(th) [v] junction temperature : t j [ c ] fig.8 transconductance vs. drain current transconductance : g fs [s] drain current : i d [a] gate - source voltage : v gs [v] gate - source voltage : v gs [v] 6/11 2016.02 - rev.c www.rohm.com ? 2016 rohm co., ltd. all rights reserved. data sheet
s2305 l electrical characteristic curves 0 0.2 0.4 0.6 0.8 1 1.2 1.4 6 8 10 12 14 16 18 20 22 i d = 3a i d = 6 a t a =25oc pulsed 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 -50 0 50 100 150 200 i d = 3a i d = 6 a v gs = 18v plused 0.1 1 10 0.1 1 10 100 v gs = 18v plused t a =150oc t a =125oc t a =75oc t a =25oc t a = - 25oc fig.9 static drain - source on - state resistance vs. gate source voltage static drain - source on - state resistance : r ds(on) [ w ] gate - source voltage : v gs [v] fig.10 static drain - source on - state resistance vs. junction temperature static drain - source on - state resistance : r ds(on) [ w ] junction temperature : t j [oc] fig.11 static drain - source on - state resistance vs. drain current static drain - source on - state resistance : r ds(on) [ w ] drain current : i d [a] 7/11 2016.02 - rev.c www.rohm.com ? 2016 rohm co., ltd. all rights reserved. data sheet
s2305 l electrical characteristic curves 0 1 2 3 4 5 6 7 8 9 10 0 200 400 600 800 t a =25oc 1 10 100 1000 10000 0.1 1 10 100 1000 c oss c rss c iss t a =25oc f = 1mhz v gs = 0v c oss c rss c iss t a =25oc f = 1mhz v gs = 0v 0 5 10 15 20 0 5 10 15 20 25 30 t a = 25oc v dd = 400v i d = 3a pulsed 1 10 100 1000 10000 0.1 1 10 100 t r t f t d(on) t d(off) t a = 25oc v dd = 400v v gs = 18v r g = 0 w pulsed fig.12 typical capacitance vs. drain - source voltage capacitance : c [pf] drain - source voltage : v ds [v] fig.14 switching characteristics switching time : t [ns] drain current : i d [a] fig.15 dynamic input characteristics total gate charge : q g [nc] gate - source voltage : v gs [v] coss stored energy : e oss [ ? j] fig.13 coss stored energy drain - source voltage : v ds [v] 8/11 2016.02 - rev.c www.rohm.com ? 2016 rohm co., ltd. all rights reserved. data sheet
s2305 l electrical characteristic curves 0 50 100 150 200 250 300 0 2 4 6 8 10 12 e off e on t a = 25oc v dd = 600v v gs = 18v/0v r g = 0 w l=500 ? h 0 10 20 30 40 50 60 70 80 90 100 0 200 400 600 800 1000 e off e on t a = 25oc i d = 3a v gs = 18v/0v r g = 0 w l=500 ? h 0 10 20 30 40 50 60 70 80 90 100 110 120 0 5 10 15 20 25 30 e off e on t a = 25oc v dd = 600v i d = 3a v gs = 18v/0v l=500 ? h fig.16 typical switching loss vs. drain - source voltage switching energy : e [ ? j] drain - source voltage : v ds [v] fig.18 typical switching loss vs. external gate resistance switching energy : e [ ? j] external gate resistance : r g [ w ] switching energy : e [ ? j] fig.17 typical switching loss vs. drain current drain current : i d [a] 9/11 2016.02 - rev.c www.rohm.com ? 2016 rohm co., ltd. all rights reserved. data sheet
s2305 l electrical characteristic curves 0.01 0.1 1 10 0 1 2 3 4 5 6 7 8 v gs =0v pulsed t a =150oc t a =75oc t a =25oc t a = - 25oc 10 100 1000 1 10 t a =25 oc di / dt = 110a / ? s v r = 400v v gs = 0v pulsed fig.19 inverse diode forward current vs. source - drain voltage inverse diode forward current : i s [a] source - drain voltage : v sd [v] fig.20 reverse recovery time vs.inverse diode forward current reverse recovery time : t rr [ns] inverse diode forward current : i s [a] 10/11 2016.02 - rev.c www.rohm.com ? 2016 rohm co., ltd. all rights reserved. data sheet
s2305 l measurement circuits fig.1-1 switching time measurement circuit fig.1-2 switching waveforms fig.2-1 gate charge measurement circuit fig.2-2 gate charge waveform fig.3-1 switching energy measurement circuit fig.3-2 switching waveforms fig.4-1 reverse recovery time measurement circuit fig.4-2 reverse recovery waveform v surge i rr e on = i d v ds e off = i d v ds i d v ds same type device as d.u.t. d.u.t. i d d.u.t. 11/11 2016.02 - rev.c www.rohm.com ? 2016 rohm co., ltd. all rights reserved. data sheet
r1 102 b www .rohm.com ? 2016 rohm co., ltd. all rights reserved. notice rohm c u stomer support sys tem h ttp://w w w . r ohm .com/con tact/ thank you for your accessing to rohm pr oduct informations. mor e detail pr oduct informations and catalogs ar e available, please contact us. the inf or mation contained herein is subject to change without notic e . bef ore y ou use our p r o d u c t s , ple a s e c o n t a c t o u r s a l e s r e p r e s e n t a t i v e and v e r i f y the l a test specifica- tions : althoug h r o h m is c o n t i n uousl y w o r king t o impro ve p roduct r elia bility and quality , semicon- duc tors c an brea k do w n and mal f unction due to va r ious f actor s . the ref o r e , i n ord e r to p r e ve n t per sonal i n jur y or fire a r isin g f rom f a ilure , please tak e saf ety meas ure s suc h a s c o m plying wit h the der ating cha r a cte r istics , imple menting redundant and f ire p r e ve nti o n d e s i g n s , and u tilizing bac k ups a nd f ail- saf e p rocedures . r o hm shall h a ve no responsibility f or an y damages ar ising out of the use of our p oducts beyond the r ating specified b y r ohm. examples of application circuits , circuit constants and an y other inf or mation contained herein are pro vided only to illustr ate the standard usage and oper ations of the products . the per iphe r al conditions m ust be tak en into account when designing circuits f or mass production. the technical inf or mation specified herein is intended only to sho w the typical functions of and e xamples of application circuits f or the products . r ohm does not grant y ou, e xplicitly or implicitl y , an y license to use or e x ercise intellectual prope r ty or other r ights held b y r ohm or an y other par ties . r ohm shall ha v e no responsibility whatsoe v er f or an y dispute ar ising out of the use of such technical in f or mation. the products specified in this document are not designed to be r adiation tole r ant. f or use of our products in applications requi r ing a high deg ree of reliability (as exemplified belo w), please contact and consult with a r ohm representati v e : tr anspo r tation equipment (i.e . cars , ships , tr ains), pr imar y comm unication equipment, tr affic lights , fire/cr ime pr e v ention, saf ety equipment, medical system s , ser v ers , solar cells , and po w er tr ansmission system s . do not use our products in applications requir ing e xtremely high reliabilit y , such as aerospace equipment, n uclear p o w er control systems , and submar ine repeater s . r ohm shall ha v e no responsibility f or an y damages or inju r y ar ising from non-compliance with the recommended usage conditions and specifications contained herein. r ohm has used reasona b le care to ensur the accur acy of the inf or mation contained in this document . ho w e v er , r ohm does not w arr ants that such inf or mation is error-free , and r ohm shall ha v e no responsibility f or an y damages ar ising from an y inaccu r acy or mispr int of such inf or mation. please use the products in accordance with an y applica b le en vironmental la ws and regulation s , such as the rohs directiv e . f or more details , including rohs compatibilit y , please contact a r ohm sales office . r ohm shall ha v e no responsibility f or an y damages or losses resulting non-compliance with a n y applica b le la ws or regulation s . when pro viding our products and technologies contained in this document to other countr ies , y ou m ust abide b y the procedures and pro visions stipulated in all applica b le e xpor t la ws and regulation s , including without limitation the us expor t administr ation regulations and the f oreign exchange and f oreign t r ade act. this document, in par t or in whol e , ma y not be repr inted or reproduced without pr ior consent of r ohm. 1) 2) 3) 4) 5) 6) 7) 8) 9) 10) 11) 12) 13) notes
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